cmpt918 surface mount npn silicon rf transistor description: the central semiconductor cmpt918 type is an npn silicon rf transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high frequency (vhf/uhf) amplifier and oscillator applications. marking code: c3b maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 30 v collector-emitter voltage v ceo 15 v emitter-base voltage v ebo 3.0 v continuous collector current i c 50 ma power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =15v 10 na bv cbo i c =1.0a 30 v bv ceo i c =3.0ma 15 v bv ebo i e =10a 3.0 v v ce(sat) i c =10ma, i b =1.0ma 0.4 v v be(sat) i c =10ma, i b =1.0ma 1.0 v h fe v ce =1.0v, i c =3.0ma 20 f t v ce =10v, i c =4.0ma, f=100mhz 600 mhz c ob v cb =0v, i e =0, f=1.0mhz 3.0 pf c ob v cb =10v, i e =0, f=1.0mhz 1.7 pf c ib v eb =0.5v, i c =0, f=1.0mhz 2.0 pf p out v cb =15v, i c =8.0ma, f=500mhz 30 mw g pe v cb =12v, i c =6.0ma, f=200mhz 11 db n f v ce =6.0v, i c =1.0ma, r s =50, f=60mhz 6.0 db sot-23 case r5 (27-january 2010) www.centralsemi.com
cmpt918 surface mount npn silicon rf transistor lead code: 1) base 2) emitter 3) collector marking code: c3b sot-23 case - mechanical outline www.centralsemi.com r5 (27-january 2010)
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